IN-0.52(AL0.9GA0.1)(0.48)AS/IN0.53GA0.47AS HEMT WITH IMPROVED DEVICE RELIABILITY

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题名:	IN-0.52(AL0.9GA0.1)(0.48)AS/IN0.53GA0.47AS HEMT WITH IMPROVED DEVICE RELIABILITY
作者:	WU,CS;CHAN,YJ;SHIEN,JL;CHYI,JI
贡献者:	電機工程研究所
关键词:	HETEROJUNCTION
日期:	1995
上传时间:	2010-06-29 20:23:24 (UTC+8)
出版者:	中央大學
摘要:	A novel In-0.52(Al0.9Ga0.1)(0.48)As/In0.53Ga0.47As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak g(m) of 295mS/mm, an f(T) of 35GHz, and an f(max) of 76GHz with a gate length of 0.8 mu m. Furthermore, after 36h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT, which is a better result than obtainable in conventional InP HEMTs.
關聯:	ELECTRONICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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