AN EFFICIENT ANALYTICAL MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON

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题名:	AN EFFICIENT ANALYTICAL MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON
作者:	TSAI,YT;HONG,KD;YUAN,YL
贡献者:	電機工程研究所
关键词:	THIN-FILM TRANSISTORS;SIMULATIONS
日期:	1994
上传时间:	2010-06-29 20:23:59 (UTC+8)
出版者:	中央大學
摘要:	We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. In this efficient model, the trapped-charge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.
關聯:	IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
显示于类别:	[電機工程研究所] 期刊論文

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