HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES

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题名:	HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES
作者:	SHIN,NF;CHEN,JY;JEN,TS;HONG,JW;CHANG,CY
贡献者:	電機工程研究所
日期:	1993
上传时间:	2010-06-29 20:25:03 (UTC+8)
出版者:	中央大學
摘要:	Hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's) with graded p+-i and i-n+ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITO)-coated glass. An obtained orange TFLED reveals a brightness of 207 cd/m2 at an injection current density of 600 mA/cm2, which is the brightest one ever reported for a-SiC:H TFLED's at the same injection current density. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to post-metallization annealing, and higher optical gaps of the doped layers.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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