本研究運用傅立葉轉換紅外線光譜儀 (FT-IR spectrometer) 搭配高溫穿透及反射腔體，量測數種不同摻雜的磷化銦（InP）晶圓與氧離子佈植隔離（Separation by Implantation of Oxygen, SIMOX）絕緣體上矽（Silicon on Insulator, SOI）晶圓，波長分別由0.8μm（InP）與0.7μm（SOI）到19μm，溫度由室溫分別到700℃（InP）與800℃（SOI）之輻射性質。目的在建立InP與SOI於溫升狀態下之光學常數數值，以補足過去文獻中，僅有常溫下數據，不敷高溫熱處理製程使用之缺憾。此外，本文中所分別計算出與量測得到的溫升狀態下之InP總放射率（total emissivity）及SIMOX SOI的穿透、反射等輻射性質也是文獻上首次出現。並且經由介紹快速熱處理製程（Rapid Thermal Processing, RTP），了解材料之輻射性質在溫度量測上所扮演的重要角色。本實驗經由量測InP與SOI晶圓於溫升時所表現的表觀（apparent）穿透率和反射率，以熱輻射和電磁波理論所提供關係，計算出相關的輻射性質，並分別與Palik [1]（InP）之數值及Georgia Institute of Technology之Lee and Zhang的模擬軟體Rad-Pro v1.2 [2]（SOI）進行比較，以相互驗證數據之正確性。 In this work, we measured several InP wafers with different doping and Separation by Implantation of Oxygen (SIMOX) Silicon on Insulator (SOI) wafer by using Fourier Transform Infrared (FT-IR) spectrometer with a high temperature transmittance and reflectance cell, respectively. The measurement can be performed in the temperature range from room temperature to 700℃ for InP and 800℃ for SOI respectively over a wide spectral range from 0.8μm for InP and 0.7μm for SOI to 19μm. Due to the lacks of empirical or experimental data of InP and SOI wafers at elevated temperature at present, they are simultaneously measured and analysis in the present study. Furthermore, the total emissivity of InP and the reflectance and transmittance of SIMOX SOI wafers at elevated temperatures is firstly reported in this paper. The other related radiative properties are also simultaneously deduced by optical models. And using the data from Palik’s handbook[1] for InP and the simulation software Rad-Pro v1.2 of Lee and Zhang[2] for SOI to validate the current experimental measurement.
