鈮酸鋰晶體是近來最常被研究與應用的光電材料，它可以因不同元素的摻雜而使其有不同優異地光學性質表現，但鈮酸鋰在光學的應用上，在高功率能量雷射下會因晶體折射率變化而使入射能量大量發散(我們稱此現象為光損傷)，進而使其在光學上地應用受到很大的侷限，故近來大量文獻探討以Mg、Zn等元素多摻其他雜質，使其在不同光學應用上可以因光損傷的改善而得到更廣泛的應用。在眾多光學應用的研究上，改善光折變性質的摻雜元素因為全像儲存的發現而被大量的探討，其中摻釕鈮酸鋰因為有兩個不同的能階可以被應用於非揮發性全像儲存且其光折變性質優異，是近來備受關注的光折變晶體。本研究希望可以藉由摻雜鎂元素得到擁有高抗光損傷性質的鎂釕雙摻鈮酸鋰。 本研究以自行架設的柴氏長晶系統生長鎂釕雙摻鈮酸鋰，我們成功生長出不同配比的鎂釕雙摻鈮酸鋰，其品質優良、等直徑且無裂痕，晶體直徑約35mm，長度約為45mm左右。經由ICP的檢測發現鎂元素的摻雜有助於改善釕元素在晶體內的分布，而從UV-VIS的檢測得知鎂釕雙摻鈮酸鋰依然保有摻釕鈮酸鋰的兩個能階，可使其應用於非揮發性全像儲存上。我們也藉由氧化反應來了解釕離子三種型態Ru3+、Ru4+、Ru5+對Mg:Ru:CLN的影響與其機制，並以VTE法製備近化學計量比的鎂釕雙摻鈮酸鋰，最後藉由光損傷檢測得知摻雜5mol%鎂的鎂釕雙摻鈮酸鋰可擁有高達800W/cm2的高光損傷閥值可以使其在工業上得到更廣泛的應用。 Lithium niobate (LiNbO3) single crystal is one of the most widely used electro-optical materials, because the crystals are easily grown to large dimensions and with high optical uniformity. However, the low optical damage resistance that originated by light-induced refractive index changes restricts their industrial application. Incorporating optical damage resistance dopants (ODRD), such as MgO, ZnO provides potential ways to overcome the shortages. All of the optical applications of LiNbO3, photorefractive dopants are of high interest for holographic data storage. The Ru:LiNbO3 is one of the important holographic storage media because of its good photorefractive properties and non-volatility. In this work, Mg:Ru:LiNbO3 was grown for improving their optical damage resistance. The Mg:Ru:LiNbO3 crystal was grown by the Czochralski method from a congruent melt composition. The as-grown crystal was crack-free and uni-diameter with the size of φ35mm×45mm. We discover that non-uniform distribution of Ru ion in the grown crystal has been improved as the MgO dopants. After UV-VIS spectrum detected, the Mg:Ru:LiNbO3 crystal also had two different absorption peak that can be considered a good candidate to be used for nonvolatile holographic storage. The effect of post treatment on the optical properties of Mg:Ru:LiNbO3 is also studied. Magnesium (Mg)-Ruthenium (Ru)-doped near-stoichiometric lithium niobate crystals (Mg:Ru:SLN) were prepared by the vapor transport equilibration (VTE) technique. The crystal also exhibites free light-induced scattering at the recording power density of I0 =800 W/cm2, which are favorable for industrial application.
