A Novel High-Performance Poly-Silicon Thin-Film Transistor With a Double-Channel Structure

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31768

Title:	A Novel High-Performance Poly-Silicon Thin-Film Transistor With a Double-Channel Structure
Authors:	Chien,Feng-Tso;Fang,Chin-Mu;Liao,Chien-Nan;Chen,Chii-Wen;Cheng,Ching-Hwa;Tsai,Yao-Tsung
Contributors:	電機工程研究所
Keywords:	POLY-SI TFT;TECHNOLOGY
Date:	2008
Issue Date:	2010-07-06 18:11:11 (UTC+8)
Publisher:	中央大學
Abstract:	In this letter, a novel double-channel polycrystalline-silicon (poly-Si) thin-film transistor (DCTFT) is proposed and demonstrated. The DCTFT, which includes two channels with a thicker source/drain (S/D) region, a field-induced drain, and an offset struc
Relation:	IEEE ELECTRON DEVICE LETTERS????
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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