An analytical model for silicon-on-insulator reduced surface field devices with semi-insulating polycrystalline silicon shielding layer

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题名:	An analytical model for silicon-on-insulator reduced surface field devices with semi-insulating polycrystalline silicon shielding layer
作者:	Ho,Chi-Hon;Liao,Chien-Nan;Chien,Feng-Tso;Tsai,Yao-Tsung
贡献者:	電機工程研究所
关键词:	SOI RESURF DEVICES
日期:	2008
上传时间:	2010-07-06 18:11:27 (UTC+8)
出版者:	中央大學
摘要:	An analytical model is presented to determine the potential and electric field distribution along the semiconductor Surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semi-insulating po
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS????
显示于类别:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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