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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31802


    Title: Carrier dynamics of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer
    Authors: Chang,Wen-Hao;Liao,Yu-An;Hsu,Wei-Ting;Lee,Ming-Chih;Chiu,Pei-Chin;Chyi,Jen-Inn
    Contributors: 電機工程研究所
    Date: 2008
    Issue Date: 2010-07-06 18:11:54 (UTC+8)
    Publisher: 中央大學
    Abstract: Carrier dynamics of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer were investigated by time-resolved photoluminescence (PL). Both the power dependence of PL peak shift and the long decay time constants confirm the type-II band alignment
    Relation: APPLIED PHYSICS LETTERS????
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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