Epitaxial AlN thin film surface acoustic wave devices prepared on GaN/sapphire using low-temperature helicon sputtering system

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Title:	Epitaxial AlN thin film surface acoustic wave devices prepared on GaN/sapphire using low-temperature helicon sputtering system
Authors:	Kao,H. L.;Chen,W. C.;Chien,Wei-Cheng;Lin,Hui-Feng;Chen,Tzu Chieh;Lin,Chung Yi;Lin,Y. T.;Chyi,J. -I.;Hsu,C. -H.
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;ELECTROMECHANICAL COUPLING COEFFICIENT;ALUMINUM NITRIDE;SAW DEVICES;ELECTRICAL CHARACTERIZATION;ALN/GAN HETEROSTRUCTURES;HIGH-VELOCITY;GAN;FREQUENCY;SAPPHIRE
Date:	2008
Issue Date:	2010-07-06 18:12:39 (UTC+8)
Publisher:	中央大學
Abstract:	High-quality epitaxial AlN films have been deposited on GaN/sapphire using helicon sputtering at a temperature of 300 degrees C. The surface acoustic wave (SAW) characteristics, in terms of insertion loss, stopband rejection, and electromechanical couplin
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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