Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/32055

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/32055

题名:	Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz
作者:	Shi,J.-W.;Wu,Y.-S.;Li,Z.-R.;Chen,P.-S.
贡献者:	電機工程研究所
关键词:	OPTICAL RECEIVER;PHOTODETECTORS;PERFORMANCE;1.55-MU-M
日期:	2007
上传时间:	2010-07-06 18:17:36 (UTC+8)
出版者:	中央大學
摘要:	We demonstrate a high-performance Si-SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. The trade-off between the gain and bandwidth performance of a traditional APD can be overcome due to the impact-ioni
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	306	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing