InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy

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Title:	InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy
Authors:	Chen,Shu-Han;Wang,Sheng-Yu;Hsieh,Rei-Jay;Chyi,Jen-Inn
Contributors:	電機工程研究所
Keywords:	INP/GAASSB/INP DOUBLE HBTS;BAND OFFSETS;BVCEO;GHZ
Date:	2007
Issue Date:	2010-07-06 18:17:41 (UTC+8)
Publisher:	中央大學
Abstract:	This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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