Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32201

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32201

Title:	Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes
Authors:	Hsueh,Kuang-Po;Chiang,Kuo-Chun;Hsin,Yue-Ming;Wang,Charles J.
Contributors:	電機工程研究所
Keywords:	CR/AL;TI/AL
Date:	2006
Issue Date:	2010-07-06 18:20:59 (UTC+8)
Publisher:	中央大學
Abstract:	This letter investigates three composite metals used as a reflector and Ohmic contact on n-GaN to simplify the process in a flip-chip light-emitting diode (FCLED). The investigated composite metals were Ti/Al/Ti/Au, Cr/Al/Cr/Au, and Cr/Ti/Au. The specific
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	382	View/Open

社群 sharing