Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

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Title:	Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
Authors:	Buyanova,IA;Izadifard,M;Storasta,L;Chen,WM;Kim,J;Ren,F;Thaler,G;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM-EPITAXY;ROOM-TEMPERATURE;SPIN INJECTION;SEMICONDUCTOR SPINTRONICS;DOPED GAN;FERROMAGNETISM;FILMS
Date:	2004
Issue Date:	2010-07-06 18:27:19 (UTC+8)
Publisher:	中央大學
Abstract:	(Ga,Mn)N/lnGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the lo
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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