In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

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Title:	In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
Authors:	Jiang,L;Li,SS;Yeh,NT;Chyi,JI;Ross,CE;Jones,KS
Contributors:	電機工程研究所
Date:	2003
Issue Date:	2010-07-06 18:29:33 (UTC+8)
Publisher:	中央大學
Abstract:	A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection wave band in 6.7-11.5 mum and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak detection wavelength shifts fr
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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