Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32536

Title:	Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing
Authors:	Chuo,CC;Chang,MN;Pan,FM;Lee,CM;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CONTINUOUS-WAVE OPERATION;LASER-DIODES;PHASE-SEPARATION;INTERDIFFUSION
Date:	2002
Issue Date:	2010-07-06 18:31:14 (UTC+8)
Publisher:	中央大學
Abstract:	The optical properties of thermally annealed InGaN/GaN multiple quantum wells were investigated by low-temperature photoluminescence measurements. It is found that the photoluminescence peak exhibits a redshift followed by a blueshift as the annealing tim
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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