Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

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題名:	Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
作者:	Feng,SW;Cheng,YC;Chung,YY;Yang,CC;Lin,YS;Hsu,C;Ma,KJ;Chyi,JI
貢獻者:	電機工程研究所
關鍵詞:	TIME-RESOLVED PHOTOLUMINESCENCE;MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING-DIODES;EXCITON LOCALIZATION;OPTICAL-PROPERTIES;TEMPERATURE;EMISSION;SHIFT;DOTS;THERMALIZATION
日期:	2002
上傳時間:	2010-07-06 18:31:28 (UTC+8)
出版者:	中央大學
摘要:	Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations have not been well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL meas
關聯:	JOURNAL OF APPLIED PHYSICS
顯示於類別:	[電機工程研究所] 期刊論文

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