Comparison of GaN p-i-n and Schottky rectifier performance

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Title:	Comparison of GaN p-i-n and Schottky rectifier performance
Authors:	Zhang,APP;Dang,GT;Ren,F;Cho,H;Lee,KP;Pearton,SJ;Chyi,JI;Nee,TE;Lee,CM;Chuo,CC
Contributors:	電機工程研究所
Keywords:	DESIGN CONSIDERATIONS;BREAKDOWN
Date:	2001
Issue Date:	2010-07-06 18:33:12 (UTC+8)
Publisher:	中央大學
Abstract:	The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for t
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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