2.4 GHz single-balanced diode mixer fabricated on Al2O3 substrate by thin-film technology

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32639

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32639

Title:	2.4 GHz single-balanced diode mixer fabricated on Al2O3 substrate by thin-film technology
Authors:	Lin,YH;Chan,YJ
Contributors:	電機工程研究所
Date:	2000
Issue Date:	2010-07-06 18:34:59 (UTC+8)
Publisher:	中央大學
Abstract:	A passive balun using spiral inductors and interdigital capacitors has been developed for a 24 GHz balanced diode mixer on Al2O3, substrates. Using this passive balun on the input port (RF port and LO port) of a mixer circuit and incorporating the Schottk
Relation:	MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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