Properties and effects of hydrogen in GaN

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32680

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32680

Title:	Properties and effects of hydrogen in GaN
Authors:	Pearton,SJ;Cho,H;Ren,F;Chyi,JI;Han,J;Wilson,RG
Contributors:	電機工程研究所
Keywords:	CHEMICAL-VAPOR-DEPOSITION;P-TYPE GAN;MG;PASSIVATION;ACCEPTORS;DEFECTS;SEMICONDUCTORS;COMPENSATION;ACTIVATION;ALN
Date:	2000
Issue Date:	2010-07-06 18:36:26 (UTC+8)
Publisher:	中央大學
Abstract:	The status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n d
Relation:	MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	541	View/Open

社群 sharing