Surface and bulk leakage currents in high breakdown GaN rectifiers

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32692

Title:	Surface and bulk leakage currents in high breakdown GaN rectifiers
Authors:	Ren,F;Zhang,AP;Dang,GT;Cao,XA;Cho,H;Pearton,SJ;Chyi,JI;Lee,CM;Chuo,CC
Contributors:	電機工程研究所
Keywords:	POWER DEVICES;DIODES
Date:	2000
Issue Date:	2010-07-06 18:36:52 (UTC+8)
Publisher:	中央大學
Abstract:	GaN Schottky diode rectifiers with contact diameters 125-1100 mu m were fabricated on thick (4 mu m) epi layers. At low reverse bias voltages the leakage current was proportional to contact perimeter size while at voltages approximately half the breakdown
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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