Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32695

Title:	Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
Authors:	Hsu,TM;Lan,YS;Chang,WH;Yeh,NT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	OPTICAL-PROPERTIES;LUMINESCENCE
Date:	2000
Issue Date:	2010-07-06 18:36:58 (UTC+8)
Publisher:	中央大學
Abstract:	We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 degrees C, we observed a blueshift in the interband transition energies, a decrease in the inte
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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