Effect of interdot Coulomb repulsion on charge transport of parallel two single-electron transistors

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Title:	Effect of interdot Coulomb repulsion on charge transport of parallel two single-electron transistors
Authors:	Kuo,DMT;Li,PW
Contributors:	電機工程研究所
Keywords:	QUANTUM-DOT SYSTEM;ROOM-TEMPERATURE;OSCILLATIONS;RELAXATION;INTRADOT;ENERGY;MODEL
Date:	2006
Issue Date:	2010-07-07 09:55:57 (UTC+8)
Publisher:	中央大學
Abstract:	The charge transport behaviors of two single-electron transistors (SETs) sitting in parallel are investigated using the Anderson model with two impurity levels. Interclot Coulomb interactions as well as intradot Coulomb interactions are included in the mo
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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