Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32726

Title:	Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance
Authors:	Shi,JW;Chiu,PH;Huang,FH;Wu,YS;Lu,JY;Sun,CK;Liu,CW;Chen,PS
Contributors:	電機工程研究所
Keywords:	SILICON OPTICAL RECEIVER;HIGH-SPEED;PHOTODETECTORS;TECHNOLOGY;BANDWIDTH
Date:	2006
Issue Date:	2010-07-07 09:56:25 (UTC+8)
Publisher:	中央大學
Abstract:	We demonstrate a Si/SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830 nm for application to short-reach fiber communication. We incorporate a p-type-doped Si/Si0.5Ge0
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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