Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition

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题名:	Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition
作者:	Lai,Wei-Chih;Kuo,Cheng-Huang;Yen,Wei-Yu;Sheu,Jinng-Kong;Chang,Shoou-Jinng
贡献者:	光電科學與工程學系
关键词:	LASER-DIODES;DEFECTS;LAYERS;GAN
日期:	2008
上传时间:	2010-07-07 14:07:17 (UTC+8)
出版者:	中央大學
摘要:	AlGaN/GaN strained layer superlattice (SLS) structures were prepared by metalorganic vapor deposition (MOCVD) under various growth conditions. It was found that the surface morphology and V-shaped pits were determined by growth temperature. Two different
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS????
显示于类别:	[光電科學與工程學系] 期刊論文

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