Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35470

Title:	Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector
Authors:	Lyu,YT;Lee,CT;Horng,GJ;Ho,C;Lee,CY;Wu,CS
Contributors:	光電科學與工程學系
Keywords:	SI;SI(001);LAYER
Date:	2002
Issue Date:	2010-07-07 14:19:11 (UTC+8)
Publisher:	中央大學
Abstract:	We report the PtSi film thickness dependence on the electrical barrier height and quantum efficiency of PtSi Schottky barrier detector (SBD). The thickness of the PtSi film was varied from 20 to 120 Angstrom. The electrical barrier height of the SBD is ab
Relation:	MATERIALS CHEMISTRY AND PHYSICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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