Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35474

Title:	Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors
Authors:	Lee,HY;Lin,IJ;Shieh,HM;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;ELECTRONIC BAND-STRUCTURE;GAAS
Date:	2002
Issue Date:	2010-07-07 14:21:04 (UTC+8)
Publisher:	中央大學
Abstract:	The double-delta-doped In-0.5(Al0.7Ga0.3)(0.5)P/GaAs/In0.3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the c
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	501	View/Open

社群 sharing