Influence of thermal annealing and ultraviolet light irradiation on LaF3 thin films at 193 nm

NCUIR > Research Center > Thin Film Technology Center > journal & Dissertation > Item 987654321/35683

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35683

Title:	Influence of thermal annealing and ultraviolet light irradiation on LaF3 thin films at 193 nm
Authors:	Lee,CC;Liu,MC;Kaneko,M;Nakahira,K;Takano,Y
Contributors:	薄膜技術研究中心
Keywords:	MICROSTRUCTURAL PROPERTIES;VACUUM ULTRAVIOLET;FLUORIDE FILMS;COATINGS;LITHOGRAPHY
Date:	2005
Issue Date:	2010-07-07 15:47:52 (UTC+8)
Publisher:	中央大學
Abstract:	Lanthanum fluoride.(LaF3) thin films were prepared by resistive heating evaporation and electron-beam gun evaporation under the same deposition rate, deposition substrate temperature, and vacuum pressure. The coated LaF3 films were then treated by heat an
Relation:	APPLIED OPTICS
Appears in Collections:	[Thin Film Technology Center] journal & Dissertation

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