Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35691

Title:	Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition
Authors:	Fu,Y. K.;Kuo,C. H.;Tun,C. J.;Kuo,C. W.;Lai,W. C.;Chi,G. C.;Pan,C. J.;Chen,M. C.;Hong,H. F.;Lan,S. M.
Contributors:	光電科學研究中心
Keywords:	INDIUM NITRIDE;BAND-GAP;QUANTUM DOTS;PHASE EPITAXY;ALLOYS;FILMS
Date:	2008
Issue Date:	2010-07-07 15:49:04 (UTC+8)
Publisher:	中央大學
Abstract:	Indium nitride (InN) dots grown on sapphires by metal organic chemical vapor deposition (MOCVD) with an In0.08Ga0.92N intermediate layer were demonstrated. Inserting an In0.08Ga0.92N layer between InN and GaN reduced the average size of InN dots, increase
Relation:	JOURNAL OF CRYSTAL GROWTH????
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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