Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35750

Title:	Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
Authors:	Chiou,JW;Mookerjee,S;Rao,KVR;Jan,JC;Tsai,HM;Asokan,K;Pong,WF;Chien,FZ;Tsai,MH;Chang,YK;Chen,YY;Lee,JF;Lee,CC;Chi,GC
Contributors:	光電科學研究中心
Keywords:	EPITAXIAL GAN;MG;CONDUCTION;HYDROGEN;DIODES
Date:	2002
Issue Date:	2010-07-07 15:50:32 (UTC+8)
Publisher:	中央大學
Abstract:	As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L-3-edge. The angle dependence of the XANES spectra shows that the Ga-N bonds
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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