Low temperature activation of Mg-doped GaN in O-2 ambient

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35762

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35762

Title:	Low temperature activation of Mg-doped GaN in O-2 ambient
Authors:	Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Sheu,JK;Chen,CH;Chi,GC
Contributors:	光電科學研究中心
Keywords:	P-TYPE GAN;COMPENSATION
Date:	2002
Issue Date:	2010-07-07 15:50:44 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, Mg-doped GaN epitaxial layers were grown by metalorganic vapor phase epitaxy (MOVPE) and annealed in O-2 air and N-2. It was found that we could achieve a low-resistive p-type GaN by O-2-ambient annealing at a temperature as low as 400degre
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	628	View/Open

社群 sharing