n(+)-GaN formed by Si implantation into p-GaN

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35766

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35766

Title:	n(+)-GaN formed by Si implantation into p-GaN
Authors:	Sheu,JK;Tun,CJ;Tsai,MS;Lee,CC;Chi,GC;Chang,SJ;Su,YK
Contributors:	光電科學研究中心
Keywords:	OHMIC CONTACT;LUMINESCENCE
Date:	2002
Issue Date:	2010-07-07 15:50:49 (UTC+8)
Publisher:	中央大學
Abstract:	Si-28(+) implantation into Mg-doped GaN, followed by thermal annealing in N-2 was performed to achieve n(+)-GaN layers. Multiple implantation was used to form a uniform Si implanted region. It was found that the carrier concentration of the films changed
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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