The doping process and dopant characteristics of GaN

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Title:	The doping process and dopant characteristics of GaN
Authors:	Sheu,JK;Chi,GC
Contributors:	光電科學研究中心
Keywords:	MG-DOPED GAN;P-TYPE GAN;VAPOR-PHASE EPITAXY;MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING-DIODES;N-TYPE GAN;MOBILITY ALGAN/GAN HETEROSTRUCTURES;RESISTANCE OHMIC CONTACTS;GROUP-III NITRIDES;YELLOW LUMINESCENCE
Date:	2002
Issue Date:	2010-07-07 15:50:57 (UTC+8)
Publisher:	中央大學
Abstract:	The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on the electrical and optical properties of GaN-based materials are reviewed. In addition, the roles of unintentionally introduced impurities, such as C, H, and O,
Relation:	JOURNAL OF PHYSICS-CONDENSED MATTER
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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