近年來Thin-GaN LED結構的發展已經越來越被受重視，因為以GaN為材料的Thin-GaN LED可以被廣泛運用於各類的照明系統，製作Thin-GaN LED有一個重要的關鍵技術，那就是將原本被磊晶於Sapphire上的GaN薄膜轉移至高散熱性與高導電性的基板上。其中最被廣泛運用的薄膜轉移技術即為晶圓鍵合(wafer bonding)。本研究將低溫晶圓鍵合的技術運用於Thin-GaN LED的整合，利用150 ℃的低溫晶圓鍵合技術將GaN薄膜鍵合至Si晶圓，然後再使用雷射剝離的技術將Sapphire移除，低溫晶圓鍵合技術可以避免因材料之間的CTE (Coefficient of Thermal Expansion) mismatch所衍生出來的問題。 The recent-developed thin-GaN LED structure has been attracted serious attention, which enables GaN-based LED for the lighting applications. To fabricate thin-GaN LED, it requires the transferring technique of the original epi-GaN layer onto better thermal and electrical conduction substrates. The transferring substrate should be attached with GaN epi-layer by wafer bonding. In this research, we will study fabrications of thin GaN LEDs by low-temperature wafer bonding. A low temperature wafer bonding technique need to be developed to bond GaN wafer with Si wafer. (less than 150 °C) The low temperature bonding process avoids the thermal stress problem and enhance the better results after LLO process (Laser Litf-Off).
