C-頻段(5.1-5.8GHz)射頻元件及模組技術開發---子計畫II：異質接面高速場效應電晶體在C-頻段射頻放大器之應用(III);Development of Heterostructure FET and Its Application on C-Band RF Power Amplifier (III)

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/40523

Title:	C-頻段(5.1-5.8GHz)射頻元件及模組技術開發---子計畫II：異質接面高速場效應電晶體在C-頻段射頻放大器之應用(III);Development of Heterostructure FET and Its Application on C-Band RF Power Amplifier (III)
Authors:	詹益仁;辛裕明;陳巍仁
Contributors:	電機工程系
Keywords:	C頻段射頻功率放大器;射頻元件;異質接面高速場效應電晶體;C-band radio frequency power amplifier;Radio frequency device;Heterostructure field effect transistor (FET);電子電機工程類;電信工程
Date:	2002-07-01
Issue Date:	2010-11-03 16:31:08 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：9008 ~ 9107
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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