不同磨粒披覆方式的新型拋光墊應用在矽晶圓拋光之研究; The study of using different type of coated abrasive pad in silicon wafer polishing

NCU Institutional Repository > 工學院 > 機械工程研究所 > 博碩士論文 > Item 987654321/43538

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/43538

題名:	不同磨粒披覆方式的新型拋光墊應用在矽晶圓拋光之研究;The study of using different type of coated abrasive pad in silicon wafer polishing
作者:	蔡耀慶;Yao-ching Tsai
貢獻者:	機械工程研究所
關鍵詞:	EVA熱熔膠;表面粗糙度;晶片不均勻性;拋光墊;polishing pad;EVA hot melt adhesive;surface roug
日期:	2010-07-21
上傳時間:	2010-12-08 13:43:59 (UTC+8)
出版者:	國立中央大學
摘要:	拋光墊的應用主要是使工件產生平滑表面，達到工件平坦化之精密研磨工具。傳統二維孔洞結構的拋光墊當孔洞產生磨耗後，容易產生填塞作用，且二維孔洞結構無法使拋光液有效的循環利用，進而對拋光品質造成影響，而且製造成本昂貴。而利用披覆磨粒的EVA熱熔膠拋光墊能有效的增加磨粒的利用率，其三維交織結構有較大孔隙能讓拋光液可以有效的循環補充，且EVA熱熔膠原料成本便宜，具彈性等優點。研究分為兩部份進行探討：第一部份為披覆磨料EVA熱熔膠拋光墊的製備：將加熱後之碳化矽(SiC)披覆於製備完成的EVA熱熔膠拋光墊，實驗證明在SiC磨粒粒徑4.5、1.2μm，SiC磨粒披覆溫度75°C，磨粒披覆時間90 sec，披覆壓力80 g/cm2 的參數設定下，EVA熱熔膠拋光墊有較佳磨粒披覆效果。第二部分則利用田口實驗設計法規劃藉由披覆磨粒的EVA熱熔膠拋光墊對矽晶片進行拋光，並進行探討。實驗結果發現田口實驗的加工參數以披覆磨粒大小、磨料濃度與拋光墊浸泡時間較為顯著。然而利用熱壓披覆磨粒方式會有磨粒脫落問題，於是對不同的熱壓披覆磨粒與混合披覆磨粒兩種披覆磨粒方式進行比較。從拋光效果發現，混合5 wt % 披覆磨粒1.2 μm 的EVA熱熔膠拋光墊可獲得較佳的表面粗糙度與晶片不均勻性，優於熱壓披覆磨粒1.2 μm的EVA熱熔膠拋光墊和傳統羊毛氈拋光墊。 The main application of polishing pad is workpiece surface planarization. When wear apply to traditional polishing pad, pad glazing also occurred, and slurry is difficult to circulate in its 2 dimension structure pores, and traditional polishing pad’s price is expensive. In our research, we use coated abrasive pad which can improve abrasive utilization rate, and slurry can easily circulate in its 3 dimension structure pores, besides, EVA is cheaper than other material of polishing pad. The investigation of this study was divided into two parts. The first part is the fabrication of coated abrasive EVA hot-melt pad. The experiment proves that under the setting of temperature 75 ℃, coating 4.5 and 1.2μm diameter SiC, coating time 90 sec, coating pressure 80 g/cm2 , the EVA hot-melt pad has the superior coating effect. The second part is to use Taguchi method experiment on silicon wafer polishing. The results indicate that the abrasive size, slurry concentration and pad absorption time are the obvious parameters for silicon wafer polishing. However during the polishing process the abrasive may fall off from coated abrasive pad, so this study compare the characteristic with coated abrasive pad and mixed abrasive pad. The experiment proves that using mixed 5wt% 1.2 μm abrasive pad in silicon polishing, the roughness of silicon wafer is better than using coated abrasive pad and traditional wool pad.
顯示於類別:	[機械工程研究所] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	613	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....