有機薄膜電晶體材料三併環及四併環噻吩衍生物之開發 none

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/43722

Title:	有機薄膜電晶體材料三併環及四併環噻吩衍生物之開發 none
Authors:	林育柔;Yu-jou Lin
Contributors:	化學研究所
Keywords:	載子移動率;有機薄膜電晶體;併環噻吩;mobility;fused-thiophenes;organic thin-film transistor
Date:	2010-07-22
Issue Date:	2010-12-08 14:17:12 (UTC+8)
Publisher:	國立中央大學
Abstract:	本篇論文研究著重在高穩定度有機半導體材料的開發合成，延續實驗室開發之併環噻吩衍生物，開發不對稱分子 (1) ~ (3)；引入長碳鏈開發可溶性分子 (4)、(5)；延伸共振長度並引入拉電子基開發分子 (6) ~ (8)。所開發之新材料皆具有良好的熱穩定及環境穩定性。真空蒸鍍元件製作委託美國西北大學 Tobin J. Marks 團隊，溶液製程元件則委託中研院朱治偉老師實驗室：分子 (4) 的混合材料利用溶液製程得到不錯的 P-type 電性表現，載子移動率達 0.026cm2/Vs；仍有其他材料的電性在量測中，期望能有不錯的電性表現。 This article focuses on the development of highly stable materials for organic semiconductor. Asymmetric molecules (1) ~ (3) were synthesized. Two soluble long chains are introduced to (4) and (5) for solution process application. Extension of π-π conjugation and introduction of electron withdrawing group to fused thiophene materials (6) ~ (8) were also developed. The device fabrications are assisted by two groups : Tobin J. Marks group at Northwestern University (vacuum deposition) and Chih-Wei Chu group at Acdemia Sinica (solution process). Molecule (4) mixture exhibits p channel mobility of 0.026cm2/Vs via spin coating solution process.
Appears in Collections:	[Graduate Institute of Chemistry] Electronic Thesis & Dissertation

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