多量子點系統之熱整流效應 ; Thermal rectification effects of multiple semiconductor quantum dot junctions

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/44645

Title:	多量子點系統之熱整流效應;Thermal rectification effects of multiple semiconductor quantum dot junctions
Authors:	馮勝彥;Sheng-yan Feng
Contributors:	電機工程研究所
Keywords:	熱整流;量子點;thermal rectification;quantum dot
Date:	2010-07-12
Issue Date:	2010-12-09 13:51:28 (UTC+8)
Publisher:	國立中央大學
Abstract:	本論文理論性地探討量子點崁入絕緣層系統之熱整流效應。絕緣層兩端連接金屬電極，並加入真空層使系統得到良好的熱整流效應。利用多能階安德森模型來探討多量子點系統中的熱整流特性，並且藉由凱帝旭-格林函數的技巧計算系統中電子在穿隧過程的電流與熱流。在不對稱的穿隧率和強庫侖交互作用的情況下，明顯觀察到熱整流以及負微分熱導的行為。It is illustrated that semiconductor quantum dots (QDs) embedded into an insulating matrix connected with metallic electrodes and some vacuum space can lead to significant thermal rectification effect. A multilevel Anderson model is used to investigate the thermal rectification properties of the multiple-QD junction. The charge and heat currents in the tunneling process are calculated via the Keldysh Green’s function technique. We show that pronounced thermal rectification and negative differential thermal conductance (NDTC) behaviors can be observed for the multiple-QD junction with asymmetrical tunneling rates and strong interdot Coulomb interactions.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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