有機介電層(CiPVP)電特性分析及其在有機薄膜電晶體的應用 ; Electrical Characterization of CiPVP Dielectric Layer and its Application on Organic Thin-Film Transistors

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Title:	有機介電層(CiPVP)電特性分析及其在有機薄膜電晶體的應用;Electrical Characterization of CiPVP Dielectric Layer and its Application on Organic Thin-Film Transistors
Authors:	管挺鈞;Ting-chun Kuan
Contributors:	電機工程研究所
Keywords:	有機薄膜電晶體;介電層;Dielectric Layer;Organic Thin-Film Transistors
Date:	2010-08-18
Issue Date:	2010-12-09 13:54:55 (UTC+8)
Publisher:	國立中央大學
Abstract:	近年來有機薄膜電晶體因具有低製造成本與高延展性的特點，不僅可以應用在電子紙類的商品上，而且可以結合創新與輕便的設計，因此引發了產學界廣泛的興趣。但礙於有機半導體的載子移動速度不夠快，且有機介電層的緻密性較無機材料差，因此有機薄膜電晶體電氣特性與可靠度仍無法與無機薄膜電晶體並駕齊驅。如何針對上述的兩點去做改良，正是現今有機薄膜電晶體重要的研究課題。　　在本篇論文中，我們針對有機介電層材料(CiPVP)做一個完整的電性與可靠度評估。開發CiPVP材料的最主要的目的是希望借助其優異的抗水氧特性，以達到較穩定的可靠度。因此，藉由一連串的電性特性分析，我們可以了解該有機介電層材料應用在有機薄膜電晶體上時，是否真的具有優異的抗水氧能力，以及其電性特性的好壞。　　將介電層材料CiPVP應用於金屬－介電層－金屬二極體與有機薄膜電晶體中，藉由電特性量測，我們知道CiPVP與常用的介電層材料PVP相比其電特性反而較差。原因是CiPVP材料的表面粗糙度與緻密性均較PVP差，導致內部補陷電荷與接面捕陷電荷較多，因此元件的電氣特性較差。不過CiPVP仍有其優點，就是在介電層厚度縮薄時，其電氣特性變化量較小。　　另外，在元件的可靠度評估方面，我們發現在進行真空偏壓測試與溼度測試時，CiPVP同樣具有電氣特性較不會因為厚度改變而變化的特點，顯示這材料仍具有一定的賣點。In recent years, organic thin-film-transistor attracts attention in both industrial and academic fields. Because low in production cost and high in ductility, it can be applied to electronic paper easily, combined with innovation. Still, organic semiconductors have its’ own problems: the mobility is not fast enough, and the compactness of organic dielectric layer is not as good as inorganic material as well. Therefore, organic thin-film-transistor still needs to improve itself on these areas. How to improve its performance to be good as inorganic thin-film-transistors is one of the main topics. In this paper, we focused on organic material in dielectric layer (CiPVP) to do a complete assessment of electrical and reliability. The main purpose of developing CiPVP materials is to achieve more stable reliability by its excellent resistance to water and oxygen features. By a series of electrical characterization, we can understand whether organic dielectric layer can well resist water and oxygen features when it is applied to organic thin-film-transistor and its electrical characteristic. Electrical tests show that CiPVP applied to metal- dielectric layer-metal diode and organic thin-film-transistors is worse than common dielectric layer material, PVP. Because of the poor surface roughness and compactness of CiPVP, there are more bulk trapped charges and interface trapped charges than those in PVP. Nevertheless, CiPVP has more stable electrical characteristic in thinner dielectric layer and better behavior in bias stress test and humility test when thickness changed. In conclusion, CiPVP has some problems to be solved but still enough selling points.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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