| 摘要: | 本研究計畫將開發毫米波低相位雜訊頻率合成器，實現的方法是使用金氧半場效應電晶體、矽化鍺異質接面雙極性電晶體、砷化鎵異質接面雙極性電晶體及高速電子移動率電晶體等積體電路技術。計畫目標是研究開發單一系統晶片之毫米訊號源積體電路和22 GHz 訊號源模組，其主要應用是無線通訊、毫米波遙測系統和輻射計。頻段涵蓋範圍從20 至60 GHz，研究工作包含有毫米波、類比和數位積體電路設計、構裝技術開發。計畫將研製下列相關積體電路：壓控振盪器、倍頻器、除頻器、可程式計數器、數位控制介面電路、相位比較器、充電泵、濾波器、切換器、相移器、混波器、調變器及寬頻放大器。計畫實現步驟則從系統規劃模擬、子電路系統規格訂定、相關積體電路技術及元件模型研究、被動元件與數位邏輯單元資料庫建立、單一子電路設計、佈局圖設計分析、晶片製作量測、訊號源模組開發、電路整合設計製作量測、至最後成果研究分析。在這三年的研究計畫，預期可得到成果為：微波及毫米波訊號源積體電路相關技術建立、參與研究計畫之人員培育、創新之微波及毫米波積體電路開發研究、微波及毫米波相關量測技術發展及單一系統晶片毫米訊號源之相關技術研究。本三年計畫執行期間，工作項目將包含系統規劃、電路設計及佈局、晶片製作與評估。第一年，我們將研製毫米波頻率合成器的每一個關鍵性電路，設計及佈局將完成並送至代工廠製作。第二年中，整合單一電路整合成毫米波頻率合成器積體電路，頻段以20-40 GHz (K-band)頻段和33-50 GHz (Q-band)頻段為主。第三年預定整合研製50-75 GHz (V-band)頻段之頻率合成器積體電路。 This project proposes the research and development of the low phase noise MMW frequency synthesizer using CMOS, SiGe HBT, GaAs HBT and HEMT process technologies. The major targets of the project is to develop system-on-chip MMW signal source integrated circuits and a 22-GHz source module, which can be applied to wireless communication systems, and MMW remote sensing radiometers. The frequency range of the signal sources are from 20 to 60 GHz. The research topics for this project contain the development of MMW, analog, digital integrated circuits, and package technology. The integrated circuit components will include voltage-controlled oscillator, multiplier, frequency divider, programming counter, digital-controlled interface circuit, phase detector, charge pumping, filter, switch, phase shifter, mixer, modulator, and broadband amplifier, etc. The project will be carried out following the below procedures: 1) design and simulation the MMW signal source system, 2) establish the design goals of sub-circuit systems, 3) survey the related integrated circuit foundries and the device modeling, 4) establish the passive components and digital logic cell libraries, 5) implement and fabricate the single-circuit chips, 6) measure and verify the chips, 7) develop the source module, 8) integrate the sub-circuit into a single chip, and 9) investigate the experimental results. In this 3-year project, the establishment of the microwave and MMW signal source integrated circuit technology, the innovative MMW MMICs, the related MMW measurement technology, and the system-on-chip signal source will be achieved. Also, we will train the project participants to gain MMW system and MMIC related experiences. In this 3-year project, system planning, MMIC design, chip layout, fabrication and chip evaluation will be exercised. For the first year, we will develop the key components for the MMW frequency synthesizer. The design and layout will also be completed and sent to foundry for fabrication. In the second year, we will integrate all the circuits in a single chip for the K-band and Q-band frequency synthesizers. In the third year, the V-band frequency synthesizer will be developed. 研究期間：9508 ~ 9607 |
