前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究---子計畫一：前瞻性銻化物N及P通道異質接面場效電晶體磊晶及磊晶層級整合於異質材料系統之平台的開發與研究; Study and Development of Advanced Antimonide-Based Epitaxy for N- and P-Channel Heterojunction Field Effect Transistors and Heterogeneous Integration Platforms

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/47233

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/47233

Title:	前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究---子計畫一：前瞻性銻化物N及P通道異質接面場效電晶體磊晶及磊晶層級整合於異質材料系統之平台的開發與研究;Study and Development of Advanced Antimonide-Based Epitaxy for N- and P-Channel Heterojunction Field Effect Transistors and Heterogeneous Integration Platforms
Authors:	林恆光
Contributors:	電機工程學系
Keywords:	分子束磊晶;銻化物;N 型及P 型異質接面場效電晶體;異質整合;Molecular beam epitaxy;N- and P-channel heterojunction field-effect transistor;heterogeneous integration;電子電機工程類
Date:	2010-08-01
Issue Date:	2011-07-14 10:14:37 (UTC+8)
Publisher:	行政院國家科學委員會
Abstract:	研究期間：9908 ~ 10007
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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