本研究中分別利用自然滴製法與LB-like法在矽碳及矽晶基材上製備出大面積排列規則的PS球陣列結構作為模板(Template)。 在蒸鍍Ni金屬與移除PS球模板後，可製備出大面積規則排列且尺寸均一之鎳金屬奈米點陣列。鎳金屬點退火至350 ℃時，低電阻相NiSi相已完全形成於(001)Si0.976:C0.024基材上。而當鎳金屬點退火至500 ℃時，鎳矽化物奈米點仍主要為低電阻之NiSi相，需提高退火溫度至600 ℃才會完全轉換成高電阻NiSi2相。此結果證實碳的摻雜可增加低電阻NiSi點陣之熱穩定性。而當鎳金屬奈米點陣之退火熱處理溫度升高至900 ℃時，則會發現大量奈米線結構的產生，此奈米線結構主要是由矽、氧成分所組成之非晶質SiOX奈米線，其大小約為14-20 nm，並推測其生長為固-液-固(Solid-Liquid-Solid, SLS)之成長機制。 在製備大面積規則排列矽單晶奈米環結構之研究方面，本研究也首度結合奈米球模板與多重選擇性化學濕式蝕刻技術，成功在矽晶基材上製備出環高與環寬可控制之規則有序矽單晶奈米環狀結構陣列。 The present study has demonstrated that well-ordered arrays of polystyrene(PS) nanosphere were successfully fabricated on (001)Si and (001)Si0.976C0.024 substrates by using the LB-like and/or drop-coating technique. The self-assembled PS nanosphere arrays were used as the deposition templates. After Ni thin film deposition and subsequent removal of the PS nanosphere templates, periodic Ni nanodot arrays were formed. For the samples annealed at 350℃, low-resistivity NiSi nanodots were observed to form on the (001)Si0.976C0.024 substrate. Furthermore, even after annealing at 500℃, the low-resistivity NiSi phase wewe still detected in the Ni nanodots/Si:C sample. As the annealing temperature was increased to 600℃, the nanodots grown on (001)Si0.976C0.024 substrates were then transformed to high- resistivity NiSi2 phase completely. The observed results revealed that the phase stability of NiSi nanodots was significantly improved by the addition of C to Si substrate. For the Ni nanodot samples further annealed at 900 ℃, many SiOx nanowires of 14-20 nm in diameter were observed to grow from the NiSi2 nanodot regions. The growth process of amorphous SiOx nanowires could be explained by the solid–liquid–solid (SLS) mechanism. By combining the nanosphere template and selective chemical etching, large-area size and height-tunable Si nanoring-like nanostructure arrays were successfully fabricated on (001)Si substrates.
