前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究-子計畫二：前瞻性砷化鎵銻化物雙極管和N及P通道異質接面場效電晶體製程於高性能相位陣列積體電路之研究;Research on Advanced Gaas and Antimonide-Based Hbt N- and P-Channel Quantum-Well Fet for High-Performance Phase Array Monolithic Integrated Circuits

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題名:	前瞻性銻化物異質材料整合及其高速低功率元件與可調式高頻電路應用之研究-子計畫二：前瞻性砷化鎵銻化物雙極管和N及P通道異質接面場效電晶體製程於高性能相位陣列積體電路之研究;Research on Advanced Gaas and Antimonide-Based Hbt N- and P-Channel Quantum-Well Fet for High-Performance Phase Array Monolithic Integrated Circuits
作者:	張鴻埜
貢獻者:	電機工程學系
關鍵詞:	antimonide based compound semiconductor (ABCS);BiFET;GaAs;low voltage;low power;microwave;phase array;研究領域：電子電機工程類
日期:	2011-08-01
上傳時間:	2012-01-17 19:05:37 (UTC+8)
出版者:	行政院國家科學委員會
摘要:	本研究計畫將研究開發以砷化鎵銻化物雙極管製程之高性能微波及高速混合電路，雙極管製程包括有異質接面雙極性電晶體及高速電子移動率電晶體，銻化物製程包括電子及電洞通道型異質接面場效電晶體。銻化物化合物電晶體製程將可使用互補型電路架構進行設計，並應用於低功耗高速類比混合電路設計上。基於其優異之性能，銻化物為主製程將有很大機會可以成為下一世代電晶體。將開發之關鍵電路主要應用於高性能相位陣列系統上，本研究計畫主要負責接收前端、本地振盪訊號源及高速數位調變解調變電路。研究計畫所採用的製程具有高性能、低電壓及低功耗特點並可進一步應用於綠色電子裝置研製。本研究計畫也將提出創新的電路架構，應用於砷化鎵銻化物雙極管製程上。計畫執行步驟則從系統規劃模擬、關鍵電路規格訂定、相關積體電路技術選取及元件模型研究、單一子電路設計、佈局圖設計分析、晶片製作量測、相位陣列接模組開發、電路整合設計製作量測、至最後成果研究分析。在這三年的研究計畫，預期可得到成果為砷化鎵銻化物雙極管電路設計技術建立、參與研究計畫之人員培育、創新之微波電路及積體電路開發研究、微波相關量測技術發展及 K 頻段相位陣列之相關技術研究。 This project proposes the research and development of the high-performance microwave and high-speed mixed-mode circuits using the GaAs BiFET and antimonide based compound semiconductor (ABCS) technologies. The BiFET technology consists of HBT and HEMT transistors; while the ABCS technology consists of N- and P-channel Quantum-Well FET transistors. The complementary topology can be adopted for the circuit design using the ABCS technology, and the developed technologies will be further applied to the low-power high-speed analog mixed-mode circuits. The ABCS technology has great potential for the next generation transistor due to its superior performance. The receiver front-end, local oscillator and high-speed digital modulation/demodulation circuits for a high-performance phase array system will be developed in this research project. The features of the adopted processes are high performance, low voltage and low power. Also, the developed technologies can be further applied to the green electronics. In this research project, a few innovative circuit topologies will also be proposed to apply to the circuit development using the GaAs and ABCS BiFET processes. The project will be carried out following the below procedures, 1) design and simulate the phase array system, 2) establish the design goals of sub-circuit systems, 3) survey the related integrated circuit foundries and the device modeling, 4) establish the passive components, 5) implement and fabricate the single-circuit chips, 6) measure and verify the chips or the hybrid circuits, 7) integrate the sub-circuit into a module, and 8) investigate the experimental results. In this 3-year project, the establishment of the circuit development using the GaAs and ABCS BiFET technologies, the innovative MMIC designs, the related technologies of the microwave measurement and the K-band phase array will be achieved. The project participants will be also trained to gain the phase array system and the related experiences. 研究期間：10008 ~ 10107
關聯:	財團法人國家實驗研究院科技政策研究與資訊中心
顯示於類別:	[電機工程學系] 研究計畫

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