Dislocation reduction in nitride-based Schottky diodes by using multiple Mg(x)N(y)/GaN nucleation layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50965

Title:	Dislocation reduction in nitride-based Schottky diodes by using multiple Mg(x)N(y)/GaN nucleation layers
Authors:	Lee,KH;Chang,PC;Chang,SJ;Su,YK;Wang,YC;Yu,CL;Kuo,CH
Contributors:	光電科學與工程學系
Keywords:	CHEMICAL-VAPOR-DEPOSITION;HIGH SERIES RESISTANCE;X-RAY-DIFFRACTION;THREADING DISLOCATIONS;GAN FILMS;IV PLOT;DENSITIES;SAPPHIRE;WELL
Date:	2010
Issue Date:	2012-03-27 18:14:05 (UTC+8)
Publisher:	國立中央大學
Abstract:	We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple Mg(x)N(y)/GaN nucleation layers. With multiple Mg(x)N(y)/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple Mg(x)N(y)/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (phi(B)) increased from 1.07 to 1.15 eV with the insertion of the multiple Mg(x)N(y)/GaN nucleation layers. (C) 2009 Elsevier B.V. All rights reserved.
Relation:	THIN SOLID FILMS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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