GaN-Based LEDs With AZO:Y Upper Contact

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/50979

Title:	GaN-Based LEDs With AZO:Y Upper Contact
Authors:	Chen,PH;Lai,WC;Peng,LC;Kuo,CH;Yeh,CL;Sheu,JK;Tun,CJ
Contributors:	光電科學與工程學系
Date:	2010
Issue Date:	2012-03-27 18:14:28 (UTC+8)
Publisher:	國立中央大學
Abstract:	We report the fabrication of GaN-based light-emitting diodes (LEDs) with ytterbium-doped alumina-zinc-oxide (AZO:Y) upper contact. It was found that AZO and AZO:Y are both highly transparent in the visible region with good thermal stability optically. However, it was found that AZO:Y is much more thermally stable electrically, as compared with AZO. Furthermore, it was found that the output power of GaN LEDs with AZO upper contact decreased significantly from 2.80 to 2.30 mW after 700 degrees C annealing. With the same annealing condition, it was found that output power decreased only slightly from 2.77 to 2.69 mW for the LEDs with AZO:Y upper contact.
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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