Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51055

Title:	Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
Authors:	Kuo,CH;Chang,LC;Chou,HM
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;SAPPHIRE SUBSTRATE;DENSITY
Date:	2011
Issue Date:	2012-03-27 18:16:54 (UTC+8)
Publisher:	國立中央大學
Abstract:	In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nanorod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm(-3)) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3617533] All rights reserved.
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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