An alternative passivation approach for AlGaN/GaN HEMTs

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题名:	An alternative passivation approach for AlGaN/GaN HEMTs
作者:	Lin,HK;Yu,HL;Huang,FH
贡献者:	電機工程學系
关键词:	ELECTRON-MOBILITY TRANSISTORS;FIELD-EFFECT TRANSISTORS;SURFACE PASSIVATION;DISPERSION
日期:	2010
上传时间:	2012-03-28 10:10:08 (UTC+8)
出版者:	國立中央大學
摘要:	This work proposes a two-step passivation approach for AlGaN/GaN high-electron-mobility transistors (HEMTs) and demonstrates improved dc, high-frequency and microwave power performance. These improvements depend primarily on the pretreatment of the AlGaN surface provided by the selective dry etching of n(+)-GaN cap layers and the subsequent RTA annealing of ohmic contacts, both of which steps are performed immediately before the first-step passivants are deposited. No additional process step is adopted to prepare the surface for passivation. PECVD-deposited SiN(x) and e-beam-evaporated SiO(x) are selected as the passivants in this work and both effectively suppress trapping effect when used in the two-step passivation approach. (C) 2010 Elsevier Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程學系] 期刊論文

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