Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors

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Title:	Carrier dynamics in isoelectronic ZnSe(1-x)O(x) semiconductors
Authors:	Lin,YC;Chung,HL;Chou,WC;Chen,WK;Chang,WH;Chen,CY;Chyi,JI
Contributors:	電機工程學系
Keywords:	ALLOYS
Date:	2010
Issue Date:	2012-03-28 10:10:27 (UTC+8)
Publisher:	國立中央大學
Abstract:	This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe(1-x)O(x) (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

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