DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths

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题名:	DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths
作者:	Lin,HK;Huang,FH;Yu,HL
贡献者:	電機工程學系
关键词:	FIELD-EFFECT TRANSISTORS;ELECTRON-MOBILITY TRANSISTORS;PERFORMANCE;RESISTANCE;FETS
日期:	2010
上传时间:	2012-03-28 10:10:39 (UTC+8)
出版者:	國立中央大學
摘要:	This work compares AlGaN/GaN high-electron-mobility transistors (HEMT) with different gate recess depths. Small signal analysis showed that the best device performance was achieved at an appropriate recess depth primarily that was associated with maximized intrinsic transconductance and minimized source resistance. An f(T) x L(g) product of as high as 25.6 GHz-mu m was obtained in a device with a gate recess depth of 10 nm. Further increasing the recess depth lowered the intrinsic transconductance and thereby worsened the performance. This effect was explained by the degradation of transport properties by the epitaxial damage that was itself caused by plasma-assisted dry etching processes. (C) 2010 Elsevier Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[電機工程學系] 期刊論文

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