Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition

NCU Institutional Repository > 資訊電機學院 > 電機工程學系 > 期刊論文 > Item 987654321/51940

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51940

題名:	Effects of Lens Shape on GaN Grown on Microlens Patterned Sapphire Substrates by Metallorganic Chemical Vapor Deposition
作者:	Lin,HC;Liu,HH;Lee,GY;Chyi,JI;Lu,CM;Chao,CW;Wang,TC;Chang,CJ;Chi,SWS
貢獻者:	電機工程學系
日期:	2010
上傳時間:	2012-03-28 10:11:06 (UTC+8)
出版者:	國立中央大學
摘要:	The epitaxial growth of GaN on patterned c-plane sapphire substrates having microlenses with a flat top, a dull tip, or a sharp tip is carried out. The growth mode, dislocation density, residual strain, and optical properties of GaN are investigated and correlated with the shape of the microlens. Because the growth of GaN does not take place on top of the microlens with a sharp tip, this type of patterned substrate leads to a wider low dislocation density lateral growth region, while it also gives rise to a higher compressive residual strain in GaN. For GaN grown on the microlens with a dull tip, many dislocations appear, resulting from the extra facets on the lens. It, however, has the lowest compressive strain among the samples studied. This work provides a guideline for preparing microlens patterned sapphire substrates for potential applications in high brightness InGaN light emitting diodes as both dislocation density and strain influence their internal quantum efficiency.
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
顯示於類別:	[電機工程學系] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	405	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing