Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/51943

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51943

Title:	Fabrication study of AlN solar-blind (< 280 nm) MSM photodetectors grown by low-temperature deposition
Authors:	Chen,MR;Chang,SH;Chen,TC;Hsu,CH;Kao,HL;Chyi,JI
Contributors:	電機工程學系
Date:	2010
Issue Date:	2012-03-28 10:11:29 (UTC+8)
Publisher:	國立中央大學
Abstract:	AlN, an important semiconductor with the widest band gap among III-nitrides, was employed to construct solar blind metal-semiconductor-metal photodetectors (MSM-PDs). MSM-PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 degrees C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D(2) lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Relation:	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	417	View/Open

社群 sharing